Descripción
- Manufacturer: Central Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Transistor Polarity: NPN Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1.4 V Maximum DC Collector Current: 4 A Gain Bandwidth Product fT: 2.5 MHz DC Collector/Base Gain hfe Min: 20 Maximum Operating Temperature: + 150 C
- Mounting Style: Through Hole Package / Case: TO-220 Continuous Collector Current: 0.45 A Maximum Power Dissipation: 40 W Minimum Operating Temperature: - 65 C Packaging: Bulk
Transistors Bipolar - BJT NPN Med Pwr